IRF7509,1N-1P双沟道MOS管,由IR原厂生产,Micro 8封装,参数为:VBrdss=30V,VGs Max=20V,RDS(on)4.5V N-ch=175.0mOhms,RDS(on)4.5V P-ch=400.0mOhms,RDS(on)10V N-ch=110.0mOhms,RDS(on)10V ...
IRF7303,双N沟道MOS管,由IR原厂生产,SO-8封装,参数为:VBrdss=30V,VGs Max=20V,RDS(on) Max 4.5V=80mOhms,Rth(JA)=62.5C/W,库存实时更新.咨询购买请致电:0755-83897562
IRF7309PBF-1,1N-1P双沟道MOS管,由IR原厂生产,SO-8封装,参数为:VBrdss=30V,VGs Max=20V,RDS(on)4.5V N-ch=80.0mOhms,RDS(on)4.5V P-ch=160.0mOhms,RDS(on)10V N-ch=50.0mOhms,RDS(on)10V ...
IRF7503,双N沟道MOS管,由IR原厂生产,Micro 8封装,参数为:VBrdss=30V,VGs Max=20V,RDS(on) Max 4.5V=222mOhms,Rth(JA)=100C/W,库存实时更新.咨询购买请致电:0755-83897562
IRF7331PBF-1,双N沟道MOS管,由IR原厂生产,SO-8封装,参数为:VBrdss=20V,VGs Max=12V,RDS(on) Max 4.5V=30mOhms,Rth(JA)=62.5C/W,库存实时更新.咨询购买请致电:0755-83897562
IRF7530,双N沟道MOS管,由IR原厂生产,Micro 8封装,参数为:VBrdss=20V,VGs Max=12V,RDS(on) Max 4.5V=30mOhms,Rth(JA)=100C/W,库存实时更新.咨询购买请致电:0755-83897562
IRF9952,1N-1P双沟道MOS管,由IR原厂生产,SO-8封装,参数为:VBrdss=30V,VGs Max=20V,RDS(on)4.5V N-ch=150.0mOhms,RDS(on)4.5V P-ch=400.0mOhms,RDS(on)10V N-ch=100.0mOhms,RDS(on)10V P-c...
IRF7389PBF-1,1N-1P双沟道MOS管,由IR原厂生产,SO-8封装,参数为:VGs Max=20V,RDS(on)4.5V N-ch=46.0mOhms,RDS(on)4.5V P-ch=98.0mOhms,RDS(on)10V N-ch=29.0mOhms,RDS(on)10V P-ch=58.0mOh...
IRF7331,双N沟道MOS管,由IR原厂生产,SO-8封装,参数为:VBrdss=20V,VGs Max=12V,RDS(on) Max 4.5V=30mOhms,Rth(JA)=62.5C/W,库存实时更新.咨询购买请致电:0755-83897562
IRFI4019H-117P,双N沟道MOS管,由IR原厂生产,TO-220 Full-Pak 5-Pin封装,参数为:VBrdss=150V,VGs Max=20V,Rth(JA)=65C/W,库存实时更新.咨询购买请致电:0755-83897562
IRF7380,双N沟道MOS管,由IR原厂生产,SO-8封装,参数为:VBrdss=80V,VGs Max=20V,Rth(JA)=50C/W,库存实时更新.咨询购买请致电:0755-83897562
IRF6802SD,双N沟道MOS管,由IR原厂生产,DirectFET SA封装,参数为:VBrdss=25V,VGs Max=16V,RDS(on) Max 4.5V=5.9mOhms,Rth(JA)=72C/W,库存实时更新.咨询购买请致电:0755-83897562
IRFI4020H-117P,双N沟道MOS管,由IR原厂生产,TO-220 Full-Pak 5-Pin封装,参数为:VBrdss=200V,VGs Max=20V,Rth(JA)=65C/W,库存实时更新.咨询购买请致电:0755-83897562
IRF7319,1N-1P双沟道MOS管,由IR原厂生产,SO-8封装,参数为:VBrdss=30V,VGs Max=20V,RDS(on)4.5V N-ch=46.0mOhms,RDS(on)4.5V P-ch=98.0mOhms,RDS(on)10V N-ch=29.0mOhms,RDS(on)10V P-ch=5...
IRF7506,双P沟道MOS管,由IR原厂生产,Micro 8封装,参数为:VBrdss=-30V,VGs Max=20V,RDS(on) Max 4.5V=450mOhms,Rth(JA)=100C/W,库存实时更新.咨询购买请致电:0755-83897562
IRF7103,双N沟道MOS管,由IR原厂生产,SO-8封装,参数为:VBrdss=50V,VGs Max=20V,RDS(on) Max 4.5V=200mOhms,Rth(JA)=62.5C/W,库存实时更新.咨询购买请致电:0755-83897562
IRF9358,双P沟道MOS管,由IR原厂生产,SO-8封装,参数为:VBrdss=-30V,VGs Max=20V,RDS(on) Max 4.5V=23.8mOhms,Rth(JA)=62.5C/W,库存实时更新.咨询购买请致电:0755-83897562
IRF7509PBF-1,1N-1P双沟道MOS管,由IR原厂生产,Micro-8封装,参数为:VGs Max=20V,RDS(on)4.5V N-ch=175.0mOhms,RDS(on)4.5V P-ch=400.0mOhms,RDS(on)10V N-ch=110.0mOhms,RDS(on)10V P-ch=2...
IRF7313PBF-1,双N沟道MOS管,由IR原厂生产,SO-8封装,参数为:VBrdss=30V,VGs Max=20V,RDS(on) Max 4.5V=46mOhms,Rth(JA)=62.5C/W,库存实时更新.咨询购买请致电:0755-83897562
IRF6723M2D,双N沟道MOS管,由IR原厂生产,DirectFET MA封装,参数为:VBrdss=30V,VGs Max=20V,RDS(on) Max 4.5V=11.3mOhms,Rth(JA)=56C/W,库存实时更新.咨询购买请致电:0755-83897562
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