IRF3546M,60A双集成电源模块,由IR原厂生产,PQFN 6 x 8封装,参数为:VGs Max=20V,Rth(JA)=18.4C/W,库存实时更新.咨询购买请致电:0755-83897562
IRF3575D,双N沟道MOS管,由IR原厂生产,PQFN 6 x 6封装,参数为:VBrdss=25V,VGs Max=16V,RDS(on) Max 4.5V=1.35mOhms,Rth(JA)=19.1C/W,库存实时更新.咨询购买请致电:0755-83897562
IRF9395M,双P沟道MOS管,由IR原厂生产,DirectFET MC封装,参数为:VBrdss=-30V,VGs Max=20V,RDS(on) Max 4.5V=11.9mOhms,Rth(JA)=60C/W,库存实时更新.咨询购买请致电:0755-83897562
IRF7910,双N沟道MOS管,由IR原厂生产,SO-8封装,参数为:VBrdss=12V,VGs Max=12V,RDS(on) Max 4.5V=15mOhms,Rth(JA)=62.5C/W,库存实时更新.咨询购买请致电:0755-83897562
IRF6802SD,双N沟道MOS管,由IR原厂生产,DirectFET SA封装,参数为:VBrdss=25V,VGs Max=16V,RDS(on) Max 4.5V=5.9mOhms,Rth(JA)=72C/W,库存实时更新.咨询购买请致电:0755-83897562
IRF7509,1N-1P双沟道MOS管,由IR原厂生产,Micro 8封装,参数为:VBrdss=30V,VGs Max=20V,RDS(on)4.5V N-ch=175.0mOhms,RDS(on)4.5V P-ch=400.0mOhms,RDS(on)10V N-ch=110.0mOhms,RDS(on)10V ...
IRF7319,1N-1P双沟道MOS管,由IR原厂生产,SO-8封装,参数为:VBrdss=30V,VGs Max=20V,RDS(on)4.5V N-ch=46.0mOhms,RDS(on)4.5V P-ch=98.0mOhms,RDS(on)10V N-ch=29.0mOhms,RDS(on)10V P-ch=5...
IRF7314,双P沟道MOS管,由IR原厂生产,SO-8封装,参数为:VBrdss=-20V,VGs Max=12V,RDS(on) Max 4.5V=58mOhms,Rth(JA)=62.5C/W,库存实时更新.咨询购买请致电:0755-83897562
IRF7342Q,双P沟道MOS管,由IR原厂生产,SO-8封装,参数为:VBrdss=-55V,VGs Max=20V,RDS(on) Max 4.5V=170mOhms,Rth(JA)=62.5C/W,库存实时更新.咨询购买请致电:0755-83897562
IRF7316PBF-1,双P沟道MOS管,由IR原厂生产,SO-8封装,参数为:VBrdss=-30V,VGs Max=20V,RDS(on) Max 4.5V=98mOhms,Rth(JA)=62.5C/W,库存实时更新.咨询购买请致电:0755-83897562
IRFI4020H-117P,双N沟道MOS管,由IR原厂生产,TO-220 Full-Pak 5-Pin封装,参数为:VBrdss=200V,VGs Max=20V,Rth(JA)=65C/W,库存实时更新.咨询购买请致电:0755-83897562
IRF7309,1N-1P双沟道MOS管,由IR原厂生产,SO-8封装,参数为:VBrdss=30V,VGs Max=20V,RDS(on)4.5V N-ch=80.0mOhms,RDS(on)4.5V P-ch=160.0mOhms,RDS(on)10V N-ch=50.0mOhms,RDS(on)10V P-ch=...
IRF7503,双N沟道MOS管,由IR原厂生产,Micro 8封装,参数为:VBrdss=30V,VGs Max=20V,RDS(on) Max 4.5V=222mOhms,Rth(JA)=100C/W,库存实时更新.咨询购买请致电:0755-83897562
IRF8915,双N沟道MOS管,由IR原厂生产,SO-8封装,参数为:VBrdss=20V,VGs Max=20V,RDS(on) Max 4.5V=27mOhms,Rth(JA)=62.5C/W,库存实时更新.咨询购买请致电:0755-83897562
IRF7304PBF-1,双P沟道MOS管,由IR原厂生产,SO-8封装,参数为:VBrdss=-20V,VGs Max=12V,RDS(on) Max 4.5V=90mOhms,Rth(JA)=62.5C/W,库存实时更新.咨询购买请致电:0755-83897562
IRF7389PBF-1,1N-1P双沟道MOS管,由IR原厂生产,SO-8封装,参数为:VGs Max=20V,RDS(on)4.5V N-ch=46.0mOhms,RDS(on)4.5V P-ch=98.0mOhms,RDS(on)10V N-ch=29.0mOhms,RDS(on)10V P-ch=58.0mOh...
IRF7342,双P沟道MOS管,由IR原厂生产,SO-8封装,参数为:VBrdss=-55V,VGs Max=20V,RDS(on) Max 4.5V=170mOhms,Rth(JA)=62.5C/W,库存实时更新.咨询购买请致电:0755-83897562
IRF7304,双P沟道MOS管,由IR原厂生产,SO-8封装,参数为:VBrdss=-20V,VGs Max=12V,RDS(on) Max 4.5V=90mOhms,Rth(JA)=62.5C/W,库存实时更新.咨询购买请致电:0755-83897562
IRF7902,双N沟道MOS管,由IR原厂生产,SO-8封装,参数为:VBrdss=30V,VGs Max=20V,RDS(on) Max 4.5V=18.7mOhms,Rth(JA)=62.5C/W,库存实时更新.咨询购买请致电:0755-83897562
IRF7324,双P沟道MOS管,由IR原厂生产,SO-8封装,参数为:VBrdss=-20V,VGs Max=12V,RDS(on) Max 4.5V=18mOhms,Rth(JA)=62.5C/W,库存实时更新.咨询购买请致电:0755-83897562
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