IRF7343Q
IRF7343Q,1N-1P双沟道MOS管,由IR原厂生产,SO-8封装,参数为:VBrdss=55V,VGs Max=20V,RDS(on)4.5V N-ch=65.0mOhms,RDS(on)4.5V P-ch=170.0mOhms,RDS(on)10V N-ch=50.0mOhms,RDS(on)10V P-ch=105.0mOhms,Qg Typ N-ch=24.0nC,Qg Typ P-ch=26.0nC,Qgd Typ N-ch=7.0nC,Qgd Typ P-ch=8.4nC,Rth(JA)=62.5C/W,库存实时更新.咨询购买请致电:0755-83897562
