A1425A-PLG84C

A1425A-PLG84C,现场可编程门阵列(FPGA),2.5K Gates,310 Cells,125MHz,0.8um (CMOS) Technology,5V,由Microsemi原厂生产,PLCC-84封装,详细参数为:所属产品系列:ACT 3,逻辑门数量(Gates):2500,逻辑单元数量(Cells):...

A1425A-PQG100I

A1425A-PQG100I,现场可编程门阵列(FPGA),2.5K Gates,310 Cells,125MHz,0.8um (CMOS) Technology,5V,由Microsemi原厂生产,PQFP-100封装,详细参数为:所属产品系列:ACT 3,逻辑门数量(Gates):2500,逻辑单元数量(Cells...

A1460A-1TQ176I

A1460A-1TQ176I,现场可编程门阵列(FPGA),6K Gates,848 Cells,125MHz,0.8um (CMOS) Technology,5V,由Microsemi原厂生产,TQFP-176封装,详细参数为:所属产品系列:ACT 3,逻辑门数量(Gates):6000,逻辑单元数量(Cells):...

A1460A-PG207C

A1460A-PG207C,现场可编程门阵列(FPGA),6K Gates,848 Cells,100MHz,0.8um (CMOS) Technology,5V,由Microsemi原厂生产,CPGA-207封装,详细参数为:所属产品系列:ACT 3,逻辑门数量(Gates):6000,逻辑单元数量(Cells):8...

A1460A-PQ208C

A1460A-PQ208C,现场可编程门阵列(FPGA),6K Gates,848 Cells,100MHz,0.8um (CMOS) Technology,5V,由Microsemi原厂生产,PQFP-208封装,详细参数为:所属产品系列:ACT 3,逻辑门数量(Gates):6000,逻辑单元数量(Cells):8...

A1460A-PQ208I

A1460A-PQ208I,现场可编程门阵列(FPGA),6K Gates,848 Cells,100MHz,0.8um (CMOS) Technology,5V,由Microsemi原厂生产,PQFP-208封装,详细参数为:所属产品系列:ACT 3,逻辑门数量(Gates):6000,逻辑单元数量(Cells):8...

A1460A-TQ176I

A1460A-TQ176I,现场可编程门阵列(FPGA),6K Gates,848 Cells,100MHz,0.8um (CMOS) Technology,5V,由Microsemi原厂生产,TQFP-176封装,详细参数为:所属产品系列:ACT 3,逻辑门数量(Gates):6000,逻辑单元数量(Cells):8...

A14V25A-VQ100C

A14V25A-VQ100C,现场可编程门阵列(FPGA),2.5K Gates,310 Cells,100MHz,0.8um (CMOS) Technology,3.3V,由Microsemi原厂生产,VQFP-100封装,详细参数为:所属产品系列:ACT 3,逻辑门数量(Gates):2500,逻辑单元数量(Cel...

A14V25A-VQG100C

A14V25A-VQG100C,现场可编程门阵列(FPGA),2.5K Gates,310 Cells,100MHz,0.8um (CMOS) Technology,3.3V,由Microsemi原厂生产,VQFP-100封装,详细参数为:所属产品系列:ACT 3,逻辑门数量(Gates):2500,逻辑单元数量(Ce...

A2F060M3E-1CS288I

A2F060M3E-1CS288I,现场可编程门阵列(FPGA),60K Gates,700 Cells,350MHz,130nm (CMOS) Technology,1.5V,由Microsemi原厂生产,CSP-288封装,详细参数为:所属产品系列:SmartFusion,逻辑门数量(Gates):60000,逻辑...

A2F060M3E-1CSG288I

A2F060M3E-1CSG288I,现场可编程门阵列(FPGA),60K Gates,350MHz,130nm Technology,1.5V,由Microsemi原厂生产,CSP-288封装,详细参数为:所属产品系列:SmartFusion,逻辑门数量(Gates):60000,系统门数量(System Gates...

A2F060M3E-1FG256

A2F060M3E-1FG256,现场可编程门阵列(FPGA),60K Gates,100MHz,130nm (CMOS) Technology,1.5V,由Microsemi原厂生产,FBGA-256封装,详细参数为:所属产品系列:SmartFusion,逻辑门数量(Gates):60000,系统门数量(System...

A2F060M3E-1FG256I

A2F060M3E-1FG256I,现场可编程门阵列(FPGA),60K Gates,100MHz,130nm (CMOS) Technology,1.5V,由Microsemi原厂生产,FBGA-256封装,详细参数为:所属产品系列:SmartFusion,逻辑门数量(Gates):60000,系统门数量(Syste...

A2F060M3E-1TQG144

A2F060M3E-1TQG144,现场可编程门阵列(FPGA),60K Gates,350MHz,130nm Technology,1.5V,由Microsemi原厂生产,TQFP-144封装,详细参数为:所属产品系列:SmartFusion,逻辑门数量(Gates):60000,系统门数量(System Gates...

A2F200M3F-1FG256

A2F200M3F-1FG256,MILITARY GRADE SMARTFUSION CUSTOMIZABLE SYSTEM-ON-CHIP (CSOC),由Microsemi原厂生产,FBGA-256封装,详细参数为:增强抗辐射性:No,库存实时更新.咨询购买请致电:0755-83897562

A2F200M3F-1FG256I

A2F200M3F-1FG256I,MILITARY GRADE SMARTFUSION CUSTOMIZABLE SYSTEM-ON-CHIP (CSOC),由Microsemi原厂生产,FBGA-256封装,详细参数为:增强抗辐射性:No,库存实时更新.咨询购买请致电:0755-83897562

A2F200M3F-1FG484

A2F200M3F-1FG484,MILITARY GRADE SMARTFUSION CUSTOMIZABLE SYSTEM-ON-CHIP (CSOC),由Microsemi原厂生产,FBGA-484封装,详细参数为:增强抗辐射性:No,库存实时更新.咨询购买请致电:0755-83897562

A2F200M3F-1FG484I

A2F200M3F-1FG484I,MILITARY GRADE SMARTFUSION CUSTOMIZABLE SYSTEM-ON-CHIP (CSOC),由Microsemi原厂生产,FBGA-484封装,详细参数为:增强抗辐射性:No,库存实时更新.咨询购买请致电:0755-83897562

A2F200M3F-1FGG256I

A2F200M3F-1FGG256I,现场可编程门阵列(FPGA),200K Gates,350MHz,130nm Technology,1.5V,由Microsemi原厂生产,FPBGA-256封装,详细参数为:所属产品系列:SmartFusion,逻辑门数量(Gates):200000,系统门数量(System G...

A2F200M3F-CSG288I

A2F200M3F-CSG288I,现场可编程门阵列(FPGA),200K Gates,100MHz,130nm Technology,1.5V,由Microsemi原厂生产,CSP-288封装,详细参数为:所属产品系列:SmartFusion,逻辑门数量(Gates):200000,系统门数量(System Gate...