DF10G7M1N,LF,ESD静电抑制器,二极管阵列,品牌:Toshiba,封装:DFN-10,参数:类型:Diode Arrays; 配置:Quad; 引脚数量:10; 方向类型:Uni-Directional; 最大钳位电压:12(Typ) V; 每芯片单元数目:4; ESD保护电压:8@Contact Disc kV; 最大工作电压:5 V; 最大漏电流:0.5 uA; 电容值:0.5 pF; 最低工作温度:-55 ℃; 最大工作温度:150 ℃; 安装方式:Surface Mount. 询报价及购买请致电:0755-83897562
| Type: | Diode Arrays |
| Configuration: | Quad |
| Pin Count: | 10 |
| Direction Type: | Uni-Directional |
| Maximum Clamping Voltage: | 12(Typ) V |
| Number of Elements per Chip: | 4 |
| ESD Protection Voltage: | ±8@Contact Disc kV |
| Maximum Working Voltage: | 5 V |
| Maximum Leakage Current: | 0.5 uA |
| Capacitance Value: | 0.5 pF |
| Minimum Operating Temperature: | -55 ℃ |
| Maximum Operating Temperature: | 150 ℃ |
| Mounting: | Surface Mount |
| Rad Hard: | No |
