TRF1123IRTMTG3
TRF1123IRTMTG3,射频运放芯片,RF Amp Chip Single Power Amp 2.7GHz 5.25V/7.35V,品牌:TI,封装:32VQFN EP,咨询购买请致电:0755-83897562
- Description：RF Amp Chip Single Power Amp 2.7GHz ±5.25V/7.35V 32-Pin VQFN EP T/R
- 品牌：TI
- 封装：32VQFN EP
- 描述：射频运放芯片,RF Amp Chip Single Power Amp 2.7GHz ±5.25V/7.35V
- DataSheet：数据手册 pdf
电气特性 Features
| Number of Channels per Chip: | 1 |
| Type: | Power Amplifier |
| Typical Gain Flatness: | 3 dB |
| Typical Output Power: | 31.5@2700MHz dBm |
| Typical Power Gain: | 30@2700MHz dB |
| Maximum Operating Frequency Range: | 2000 to 3000 MHz |
| Maximum Output Return Loss: | 8(Typ) dB |
| Typical Noise Figure: | 6 dB |
| Typical Output Intercept Point: | 52@2700MHz dBm |
| Typical Single Supply Voltage: | 7 V |
| Maximum Power Dissipation: | 5500 mW |
| Maximum Supply Current: | 700@7V mA |
| Rad Hard: | No |
- Description：RF Amp Chip Single Power Amp 2.7GHz ±5.25V/7.35V 32-Pin VQFN EP T/R
- 品牌：TI
- 封装：32VQFN EP
- 描述：射频运放芯片,RF Amp Chip Single Power Amp 2.7GHz ±5.25V/7.35V
- DataSheet：数据手册 pdf
