BGB717L7ESDE6327XTSA1
BGB717L7ESDE6327XTSA1,射频运放芯片,RF Amp Chip Single GP 108MHz 4V,品牌:Infineon,封装:6TSLP EP,咨询购买请致电:0755-83897562
- Description：RF Amp Chip Single GP 108MHz 4V 6-Pin TSLP EP T/R
- 品牌：Infineon
- 封装：6TSLP EP
- 描述：射频运放芯片,RF Amp Chip Single GP 108MHz 4V
- DataSheet：数据手册 pdf
电气特性 Features
| Number of Channels per Chip: | 1 |
| Type: | General Purpose Amplifier |
| Typical Power Gain: | 12@100MHz dB |
| Maximum Operating Frequency Range: | 50 to 200 MHz |
| Maximum Output Return Loss: | 19@100MHz dB |
| Typical Noise Figure: | 1@100MHz dB |
| Typical Single Supply Voltage: | 3 V |
| Maximum Power Dissipation: | 100 mW |
| Maximum Supply Current: | 3.6@3V mA |
| Rad Hard: | No |
- Description：RF Amp Chip Single GP 108MHz 4V 6-Pin TSLP EP T/R
- 品牌：Infineon
- 封装：6TSLP EP
- 描述：射频运放芯片,RF Amp Chip Single GP 108MHz 4V
- DataSheet：数据手册 pdf
