HN1B04F(TE85L,F),功率晶体管,品牌:Toshiba,封装:SM-6,参数:类型:NPN|PNP; 引脚数量:6; 最大集电极发射极电压:30 V; 最大DC直流集电极电流:0.5 A; 最小DC直流电流增益:25@400mA@6V|70@100mA@1V; 最大集电极发射极饱和电压:0.25@10mA@100mA V; 最大集电极基极电压:35 V; 工作温度:-55 to 150 ℃; 最大功率耗散:300 mW; 安装方式:Surface Mount. 询报价及购买请致电:0755-83897562
| Type: | NPN|PNP |
| Pin Count: | 6 |
| Maximum Collector Emitter Voltage: | 30 V |
| Maximum DC Collector Current: | 0.5 A |
| Minimum DC Current Gain: | 25@400mA@6V|70@100mA@1V |
| Maximum Collector Emitter Saturation Voltage: | 0.25@10mA@100mA V |
| Maximum Collector Base Voltage: | 35 V |
| Operating Temperature: | -55 to 150 ℃ |
| Maximum Power Dissipation: | 300 mW |
| Mounting: | Surface Mount |
| Rad Hard: | No |
