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PBSS4230PANP,115

PBSS4230PANP,115,功率晶体管,品牌:NXP,封装:DFN-6,参数:类型:NPN|PNP; 引脚数量:6; 最大集电极发射极电压:30 V; 最大DC直流集电极电流:2 A; 最小DC直流电流增益:250@100mA@2V@NPN|230@500mA@2V@NPN|200@1A@2V@NPN|150@2A@2V@NPN|260@100mA@2V@PNP|210@500mA@2V@PNP|160@1A@2V@PNP|100@2A@2V@PNP; 最大集电极发射极饱和电压:0.08@50mA@500mA@NPN|0.16@50mA@1A@NPN|0.3@100mA@2A@NPN|0.29@200mA@2A@NPN|0.11@50mA@500mA@PNP|0.16@50mA@1A@PNP|0.42@100mA@2A@PNP|0.39@200mA@2A@PNP V; 最大集电极基极电压:30 V; 工作温度:-55 to 150 ℃; 最大功率耗散:2000 mW; 安装方式:Surface Mount. 询报价及购买请致电:0755-83897562

  • Description:Trans GP BJT NPN/PNP 30V 2A 6-Pin DFN T/R
  • 品牌:NXP
  • 封装:DFN-6
  • 描述:功率晶体管,参数:Trans GP BJT NPN/PNP 30V 2A
  • DataSheet:数据手册 pdf

电气特性 Features

Type:NPN|PNP
Pin Count:6
Maximum Collector Emitter Voltage:30 V
Maximum DC Collector Current:2 A
Minimum DC Current Gain:250@100mA@2V@NPN|230@500mA@2V@NPN|200@1A@2V@NPN|150@2A@2V@NPN|260@100mA@2V@PNP|210@500mA@2V@PNP|160@1A@2V@PNP|100@2A@2V@PNP
Maximum Collector Emitter Saturation Voltage:0.08@50mA@500mA@NPN|0.16@50mA@1A@NPN|0.3@100mA@2A@NPN|0.29@200mA@2A@NPN|0.11@50mA@500mA@PNP|0.16@50mA@1A@PNP|0.42@100mA@2A@PNP|0.39@200mA@2A@PNP V
Maximum Collector Base Voltage:30 V
Operating Temperature:-55 to 150 ℃
Maximum Power Dissipation:2000 mW
Mounting:Surface Mount
Rad Hard:No
  • Description:Trans GP BJT NPN/PNP 30V 2A 6-Pin DFN T/R
  • 品牌:NXP
  • 封装:DFN-6
  • 描述:功率晶体管,参数:Trans GP BJT NPN/PNP 30V 2A
  • DataSheet:数据手册 pdf

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