SNSS20101JT1G,功率晶体管,品牌:ON,封装:Trans,参数:类型:NPN; 最大集电极发射极电压:20 V; 最大DC直流集电极电流:2 A; 最小DC直流电流增益:200@10m@2V|200@100mA@2V|150@500mA@2V|100@1A@2V; 最大工作频率:350(Typ) MHz; 最大集电极发射极饱和电压:0.015@0.5mA@10mA|0.04@0.01A@0.1A|0.115@0.05A@0.5A|0.22@0.1A@1A V; 最大集电极基极电压:40 V; 工作温度:-55 to 150 ℃; 最大功率耗散:300 mW. 询报价及购买请致电:0755-83897562
| Type: | NPN |
| Maximum Collector Emitter Voltage: | 20 V |
| Maximum DC Collector Current: | 2 A |
| Minimum DC Current Gain: | 200@10m@2V|200@100mA@2V|150@500mA@2V|100@1A@2V |
| Maximum Operating Frequency: | 350(Typ) MHz |
| Maximum Collector Emitter Saturation Voltage: | 0.015@0.5mA@10mA|0.04@0.01A@0.1A|0.115@0.05A@0.5A|0.22@0.1A@1A V |
| Maximum Collector Base Voltage: | 40 V |
| Operating Temperature: | -55 to 150 ℃ |
| Maximum Power Dissipation: | 300 mW |
| Rad Hard: | No |
