IRLML6401,P沟道功率MOS管,由IR原厂生产,Micro 3/ SOT-23封装,参数为:VBrdss=-12V,VGs=8V,RDS(on) Max 4.5V=50.0mOhms,Qg Typ=10.0nC,Rth(JC)=100 (JA)K/W,库存实时更新.咨询购买请致电:0755-83897562
24C64A-10TU27存储器,存储芯片由ATMEL原厂生...
24C01B-PU存储器,存储芯片由ATMEL原厂生产,采用...
93C66A-10TU27存储器,存储芯片,3线串行EEPR...
74LVC373APW低功耗CMOS逻辑IC由NXP原厂生产...
93C66A-10PU27存储器,存储芯片,3线串行EEPR...
AT24C16BN-SH-T存储器,存储芯片由ATMEL原厂...
ATF16V8B-15PU单片机,高性能,可编程逻辑器件由A...
24C04B-TH-T存储器,存储芯片由ATMEL原厂生产,...
AT27C020-70JC存储器,存储芯片由ATMEL原厂生...