PMBFJ175,215
PMBFJ175,215,场效应晶体管,品牌:NXP,封装:TO-236AB-3,参数:配置:Single; 沟道类型:P沟道; 最大漏源电压:30 V; 最大连续漏极电流:70 mA; 最大门源电压:30 V; 最大漏极栅极电压:30 V; 工作温度:-65 to 150 ℃; 安装方式:Surface Mount. 库存实时更新,询报价及购买请致电:0755-83897562
- Description：Trans JFET P-CH 30V 70mA 3-Pin TO-236AB T/R
- 品牌：NXP
- 封装：TO-236AB-3
- 描述：P沟道,场效应晶体管,参数:Trans JFET P-CH 30V 70mA
- DataSheet：数据手册 pdf
电气特性 Features
| Configuration: | Single |
| Channel Type: | P |
| Maximum Drain Source Voltage: | 30 V |
| Maximum Continuous Drain Current: | 70 mA |
| Maximum Gate Source Voltage: | 30 V |
| Maximum Drain Gate Voltage: | 30 V |
| Operating Temperature: | -65 to 150 ℃ |
| Mounting: | Surface Mount |
| Rad Hard: | No |
- Description：Trans JFET P-CH 30V 70mA 3-Pin TO-236AB T/R
- 品牌：NXP
- 封装：TO-236AB-3
- 描述：P沟道,场效应晶体管,参数:Trans JFET P-CH 30V 70mA
- DataSheet：数据手册 pdf
