IRF7807Z,N沟道功率MOS管,由IR原厂生产,SO-8封装,参数为:VBrds=30V,VGs=20V,RDS(on) Max 10V=13.8mOhms,库存实时更新.咨询购买请致电:0755-83897562
24C04B-PU存储器,存储芯片由ATMEL原厂生产,采用...
24C64A-10TU27存储器,存储芯片由ATMEL原厂生...
74HC02PW高速CMOS逻辑IC由NXP原厂生产,采用T...
AT27C256R-70JU存储器,存储芯片由ATMEL原厂...
ATF1508AS-10AU100单片机,高性能,可编程逻辑...
74HC238PW高速CMOS逻辑IC由NXP原厂生产,采用...
SN74LV165APWR低功耗逻辑IC由TI原厂生产,采用...
74HCT74PW高速CMOS逻辑IC由NXP原厂生产,采用...
AT24C02B-TH-T存储器,存储芯片由ATMEL原厂生...