2SK1875-V(TE85L,F)
2SK1875-V(TE85L,F),场效应晶体管,品牌:Toshiba,封装:USM-3,参数:配置:Single; 沟道类型:N沟道; 最大连续漏极电流:32 mA; 最大漏极栅极电压:-20 V; 工作温度:-55 to 125 ℃; 安装方式:Surface Mount. 询报价及购买请致电:0755-83897562
- Description：Trans JFET N-CH 32mA 3-Pin USM T/R
- 品牌：Toshiba
- 封装：USM-3
- 描述：N沟道,场效应晶体管,参数:Trans JFET N-CH 32mA
- DataSheet：数据手册 pdf
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Continuous Drain Current: | 32 mA |
| Maximum Drain Gate Voltage: | -20 V |
| Operating Temperature: | -55 to 125 ℃ |
| Mounting: | Surface Mount |
| Rad Hard: | No |
- Description：Trans JFET N-CH 32mA 3-Pin USM T/R
- 品牌：Toshiba
- 封装：USM-3
- 描述：N沟道,场效应晶体管,参数:Trans JFET N-CH 32mA
- DataSheet：数据手册 pdf
