NE3516S02-T1C-A
NE3516S02-T1C-A,场效应晶体管,品牌:NEC,封装:Micro-X-4,参数:配置:Single Dual Source; 沟道类型:N沟道; 最大漏源电压:4 V; 最大连续漏极电流:60 mA; 最大门源电压:-3 V; 工作温度:-65 to 125 ℃; 安装方式:Surface Mount. 询报价及购买请致电:0755-83897562
- 品牌：NEC
- 封装：Micro-X-4
- 描述：N沟道,场效应晶体管,参数:Trans JFET N-CH 4V 60mA
- Description：Trans JFET N-CH 4V 60mA 4-Pin Micro-X
电气特性 Features
| Configuration: | Single Dual Source |
| Channel Type: | N |
| Maximum Drain Source Voltage: | 4 V |
| Maximum Continuous Drain Current: | 60 mA |
| Maximum Gate Source Voltage: | -3 V |
| Operating Temperature: | -65 to 125 ℃ |
| Mounting: | Surface Mount |
| Rad Hard: | No |
- 品牌：NEC
- 封装：Micro-X-4
- 描述：N沟道,场效应晶体管,参数:Trans JFET N-CH 4V 60mA
- Description：Trans JFET N-CH 4V 60mA 4-Pin Micro-X
