3SK263-5-TG-E
3SK263-5-TG-E,场效应晶体管,品牌:ON,封装:CP-4,参数:配置:Single Dual Gate; 沟道类型:N沟道; 最大漏源电压:15 V; 最大连续漏极电流:30 mA; 最大门源电压:8 V; 工作温度:-55 to 125 ℃; 安装方式:Surface Mount. 询报价及购买请致电:0755-83897562
- Description：Trans JFET N-CH 15V 30mA 4-Pin(3+Tab) CP T/R
- 品牌：ON
- 封装：CP-4
- 描述：N沟道,场效应晶体管,参数:Trans JFET N-CH 15V 30mA
- DataSheet：数据手册 pdf
电气特性 Features
| Configuration: | Single Dual Gate |
| Channel Type: | N |
| Maximum Drain Source Voltage: | 15 V |
| Maximum Continuous Drain Current: | 30 mA |
| Maximum Gate Source Voltage: | 8 V |
| Operating Temperature: | -55 to 125 ℃ |
| Mounting: | Surface Mount |
| Rad Hard: | No |
- Description：Trans JFET N-CH 15V 30mA 4-Pin(3+Tab) CP T/R
- 品牌：ON
- 封装：CP-4
- 描述：N沟道,场效应晶体管,参数:Trans JFET N-CH 15V 30mA
- DataSheet：数据手册 pdf
