MX2N4856
MX2N4856,场效应晶体管,品牌:Microsemi,封装:TO-18-3,参数:配置:Single; 沟道类型:N沟道; 最大漏源电压:40 V; 最大门源电压:-40 V; 最大漏极栅极电压:40 V; 工作温度:-65 to 200 ℃; 安装方式:Through Hole. 库存实时更新,询报价及购买请致电:0755-83897562
- Description：Trans JFET N-CH 40V 3-Pin TO-18
- 品牌：Microsemi
- 封装：TO-18-3
- 描述：N沟道,场效应晶体管,参数:Trans JFET N-CH 40V
- DataSheet：数据手册 pdf
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Drain Source Voltage: | 40 V |
| Maximum Gate Source Voltage: | -40 V |
| Maximum Drain Gate Voltage: | 40 V |
| Operating Temperature: | -65 to 200 ℃ |
| Mounting: | Through Hole |
| Rad Hard: | No |
- Description：Trans JFET N-CH 40V 3-Pin TO-18
- 品牌：Microsemi
- 封装：TO-18-3
- 描述：N沟道,场效应晶体管,参数:Trans JFET N-CH 40V
- DataSheet：数据手册 pdf
