RGT40NS65DGTL
RGT40NS65DGTL,绝缘栅双极型晶体管单管,品牌:Rohm,封装:TO-263S-3,参数:配置:Single; 通道类型:N; 最大集电极发射极电压:650 V; 最大连续集电极电流:40 A; 最大栅极发射极电压:30 V; 安装方式:Surface Mount; 工作温度:-40 to 175 ℃. 询报价及购买请致电:0755-83897562
- Description：Trans IGBT Chip N-CH 650V 40A 3-Pin TO-263S T/R
- 品牌：Rohm
- 封装：TO-263S-3
- 描述：IGBT管,绝缘栅双极型晶体管单管,参数:Trans IGBT Chip N-CH 650V 40A
- DataSheet：数据手册 pdf
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 650 V |
| Maximum Continuous Collector Current: | 40 A |
| Maximum Gate Emitter Voltage: | ±30 V |
| Mounting: | Surface Mount |
| Operating Temperature: | -40 to 175 ℃ |
| Rad Hard: | No |
- Description：Trans IGBT Chip N-CH 650V 40A 3-Pin TO-263S T/R
- 品牌：Rohm
- 封装：TO-263S-3
- 描述：IGBT管,绝缘栅双极型晶体管单管,参数:Trans IGBT Chip N-CH 650V 40A
- DataSheet：数据手册 pdf
