IGZ100N65H5XKSA1
IGZ100N65H5XKSA1,绝缘栅双极型晶体管单管,品牌:Infineon,封装:TO-247-4,参数:配置:Single Dual Emitter; 通道类型:N; 最大集电极发射极电压:650 V; 最大连续集电极电流:161 A; 最大栅极发射极电压:20 V; 安装方式:Through Hole; 工作温度:-40 to 175 ℃. 询报价及购买请致电:0755-83897562
- Description：Trans IGBT Chip N-CH 650V 161A 4-Pin TO-247 Tube
- 品牌：Infineon
- 封装：TO-247-4
- 描述：IGBT管,绝缘栅双极型晶体管单管,参数:Trans IGBT Chip N-CH 650V 161A
- DataSheet：数据手册 pdf
电气特性 Features
| Configuration: | Single Dual Emitter |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 650 V |
| Maximum Continuous Collector Current: | 161 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Through Hole |
| Operating Temperature: | -40 to 175 ℃ |
| Rad Hard: | No |
- Description：Trans IGBT Chip N-CH 650V 161A 4-Pin TO-247 Tube
- 品牌：Infineon
- 封装：TO-247-4
- 描述：IGBT管,绝缘栅双极型晶体管单管,参数:Trans IGBT Chip N-CH 650V 161A
- DataSheet：数据手册 pdf
