HGTD1N120BNS9A
HGTD1N120BNS9A,绝缘栅双极型晶体管单管,品牌:Fairchild,封装:DPAK-3,参数:配置:Single; 通道类型:N; 最大集电极发射极电压:1200 V; 最大连续集电极电流:5.3 A; 最大栅极发射极电压:20 V; 安装方式:Surface Mount. 询报价及购买请致电:0755-83897562
- Description：Trans IGBT Chip N-CH 1.2KV 5.3A 3-Pin(2+Tab) DPAK T/R
- 品牌：Fairchild
- 封装：DPAK-3
- 描述：IGBT管,绝缘栅双极型晶体管单管,参数:Trans IGBT Chip N-CH 1.2KV 5.3A
- DataSheet：数据手册 pdf
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 1200 V |
| Maximum Continuous Collector Current: | 5.3 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Surface Mount |
| Rad Hard: | No |
- Description：Trans IGBT Chip N-CH 1.2KV 5.3A 3-Pin(2+Tab) DPAK T/R
- 品牌：Fairchild
- 封装：DPAK-3
- 描述：IGBT管,绝缘栅双极型晶体管单管,参数:Trans IGBT Chip N-CH 1.2KV 5.3A
- DataSheet：数据手册 pdf
