GT60M303(Q)
GT60M303(Q),绝缘栅双极型晶体管单管,品牌:Toshiba,封装:TO-3P(LH)-3,参数:配置:Single; 通道类型:N; 最大集电极发射极电压:900 V; 最大连续集电极电流:60 A; 最大栅极发射极电压:25 V; 安装方式:Through Hole. 询报价及购买请致电:0755-83897562
- Description：Trans IGBT Chip N-CH 900V 60A 3-Pin TO-3P(LH)
- 品牌：Toshiba
- 封装：TO-3P(LH)-3
- 描述：IGBT管,绝缘栅双极型晶体管单管,参数:Trans IGBT Chip N-CH 900V 60A
- DataSheet：数据手册 pdf
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 900 V |
| Maximum Continuous Collector Current: | 60 A |
| Maximum Gate Emitter Voltage: | ±25 V |
| Mounting: | Through Hole |
| Rad Hard: | No |
- Description：Trans IGBT Chip N-CH 900V 60A 3-Pin TO-3P(LH)
- 品牌：Toshiba
- 封装：TO-3P(LH)-3
- 描述：IGBT管,绝缘栅双极型晶体管单管,参数:Trans IGBT Chip N-CH 900V 60A
- DataSheet：数据手册 pdf
