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APT100GN60LDQ4G

APT100GN60LDQ4G,绝缘栅双极型晶体管单管,品牌:Microsemi,封装:TO-264-3,参数:配置:Single; 通道类型:N; 最大集电极发射极电压:600 V; 最大连续集电极电流:229 A; 最大栅极发射极电压:30 V; 安装方式:Through Hole. 库存实时更新,询报价及购买请致电:0755-83897562

  • 品牌:Microsemi
  • 封装:TO-264-3
  • 描述:IGBT管,绝缘栅双极型晶体管单管,参数:Trans IGBT Chip N-CH 600V 229A
  • Description:Trans IGBT Chip N-CH 600V 229A 3-Pin(3+Tab) TO-264

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:229 A
Maximum Gate Emitter Voltage:±30 V
Mounting:Through Hole
Rad Hard:No
  • 品牌:Microsemi
  • 封装:TO-264-3
  • 描述:IGBT管,绝缘栅双极型晶体管单管,参数:Trans IGBT Chip N-CH 600V 229A
  • Description:Trans IGBT Chip N-CH 600V 229A 3-Pin(3+Tab) TO-264

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