注册账号 | 忘记密码
KTD998,晶体管,三极管,TO-3P封装,参数为:Pcm=3000mW,Ic=10000mA,BVcbo=120V,BVceo=120V,BVebo=5V,hfe(Min)=55,hfe(Max)=160,Vce(sat)=2.5V,fr=12+MHz,库存实时更新.咨询购买请致电:0755-83897562
MC74VHC4066DTR2超高速CMOS逻辑IC由ON原...
SN74HC132DR高速CMOS逻辑IC由TI原厂生产,采...
MC14060BDTR2G CMOS电路,数字逻辑IC由ON...
SN74LV4052APWR低功耗CMOS逻辑IC由TI原厂...
93C66A-10SU27存储器,存储芯片,3线串行EEPR...
74HC153D高速CMOS逻辑IC由NXP原厂生产,采用S...
74HC541D高速CMOS逻辑IC由NXP原厂生产,采用7...
SN74LVC1G08DBVR低功耗CMOS逻辑IC由TI原...
SN74HC00PWR高速CMOS逻辑IC由TI原厂生产,采...