IRF9952
IRF9952,1N-1P双沟道MOS管,由IR原厂生产,SO-8封装,参数为:VBrdss=30V,VGs Max=20V,RDS(on)4.5V N-ch=150.0mOhms,RDS(on)4.5V P-ch=400.0mOhms,RDS(on)10V N-ch=100.0mOhms,RDS(on)10V P-ch=250.0mOhms,Qg Typ N-ch=6.9nC,Qg Typ P-ch=6.1nC,Qgd Typ N-ch=1.8nC,Qgd Typ P-ch=1.1nC,Rth(JA)=62.5C/W,库存实时更新.咨询购买请致电:0755-83897562
