RN1130MFV,L3F
RN1130MFV,L3F,数字晶体管,品牌:Toshiba,封装:VESM-3,参数:配置:Single; 类型:NPN; 最大集电极发射极电压:50 V; 峰值DC直流集电极电流:0.1 A; 最小DC直流电流增益:100@10mA@5V; 工作温度:-55 to 150 ℃; 安装方式:Surface Mount. 询报价及购买请致电:0755-83897562
- Description：Trans Digital BJT NPN 50V 0.1A 3-Pin VESM Embossed T/R
- 品牌：Toshiba
- 封装：VESM-3
- 描述：数字晶体管,参数:Trans Digital BJT NPN 50V 0.1A
- DataSheet：数据手册 pdf
电气特性 Features
| Configuration: | Single |
| Type: | NPN |
| Maximum Collector Emitter Voltage: | 50 V |
| Peak DC Collector Current: | 0.1 A |
| Minimum DC Current Gain: | 100@10mA@5V |
| Operating Temperature: | -55 to 150 ℃ |
| Mounting: | Surface Mount |
| Rad Hard: | No |
- Description：Trans Digital BJT NPN 50V 0.1A 3-Pin VESM Embossed T/R
- 品牌：Toshiba
- 封装：VESM-3
- 描述：数字晶体管,参数:Trans Digital BJT NPN 50V 0.1A
- DataSheet：数据手册 pdf
