ESM2012DV
ESM2012DV,三极管,达林顿管,品牌:STMicroelectronics,封装:ISOTOP-4,参数:配置:Single Dual Emitter; 类型:NPN; 最大集电极发射极电压:150 V; 峰值DC直流集电极电流:120 A; 最小DC直流电流增益:1200(Typ)@100A@5V; 最大集电极发射极饱和电压:1.5@0.25A@70A|2@1A@100A V; 安装方式:Screw. 询报价及购买请致电:0755-83897562
ESM2012DV,三极管,达林顿管,品牌:STMicroelectronics,封装:ISOTOP-4,参数:配置:Single Dual Emitter; 类型:NPN; 最大集电极发射极电压:150 V; 峰值DC直流集电极电流:120 A; 最小DC直流电流增益:1200(Typ)@100A@5V; 最大集电极发射极饱和电压:1.5@0.25A@70A|2@1A@100A V; 安装方式:Screw. 询报价及购买请致电:0755-83897562
Configuration: | Single Dual Emitter |
Type: | NPN |
Maximum Collector Emitter Voltage: | 150 V |
Peak DC Collector Current: | 120 A |
Minimum DC Current Gain: | 1200(Typ)@100A@5V |
Maximum Collector Emitter Saturation Voltage: | 1.5@0.25A@70A|2@1A@100A V |
Mounting: | Screw |
Rad Hard: | No |